microcontroller - What is late programmed ROM? -
the datasheet tda93xx (an 80c51 based controller used in tv) on page 3 says can have:
32 - 128kx8-bit late programmed rom
i wonder means? there chance me reprogram it?
it means rom programmed before being encased variety of different methods. not mean device reprogrammable:
u.s. pat. no. 4,295,209 discloses late programming igfet rom by ion implantation through openings in overlying phosphosilicate glass layer before metallization. ion implantation done through polycrystalline silicon gate electrode of selected igfets in rom. small size in rom preserved in u.s. pat. no. 4,295,209 incorporating silicon nitride coating beneath phosphosilicate glass layer. consequently, when implant openings etched in phosphosilicate glass layer, polycrystalline silicon gate electrode not exposed. accordingly, metal lines can cross directly on implant openings without contacting gate electrodes. however, silicon nitride coating ordinarily thin , there can capacitive coupling occurs between drain lines , polysilicon gate within implant windows. in larger size roms capacitive coupling can become significant enough slow down speed of rom.
in our above-mentioned concurrently filed ser. no. 268,086, disclose different late programming process high operating speed can retained roms of usual construction. we have found technique ion implantation can used in substantially same way outlined in aforementioned u.s. pat. no. 4,295,209 without penalty of slower operating speed or expanded size in larger roms. have discovered u.s. pat. no. 4,295,209 late programming method effective on high density rom of unique configuration. unique configuration known , referred hexagonal rom. unique configuration not require metal lines cross implant windows in reflowable glass layer. thus, capacitive coupling minimized. accordingly, both highest speed , maximum rom density retained.
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